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Orientation‐dependent resonant raman scattering in InSb and GaSb at the E 1 –E 1 +Δ 1 region
Author(s) -
Dreybrodt W.,
Richter W.,
Cerdeira F.,
Cardona M.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220600115
Subject(s) - raman scattering , scattering , orientation (vector space) , x ray raman scattering , resonance (particle physics) , condensed matter physics , spectral line , phonon , phonon scattering , raman spectroscopy , crystal (programming language) , electric field , field (mathematics) , physics , optics , materials science , molecular physics , atomic physics , geometry , quantum mechanics , mathematics , computer science , pure mathematics , programming language
Abstract The resonance of the first order Raman scattering by LO and TO phonons near the E 1 and E 1 + Δ 1 electronic gaps of InSb and GaSb is presented. Whereas for forbidden LO scattering the spectra are independent of the orientation of the crystal surface, for allowed TO and LO scattering the resonance spectra depend strongly on the surface orientation. This orientation dependence is discussed in terms of both allowed and first order vector induced ( q ‐dependence, electric field, etc.) scattering processes.