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Variational method in the theory of reciprocal electron and phonon drag in semiconductors
Author(s) -
Pinchuk I. I.,
Ya. Luste O.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220600111
Subject(s) - scattering , phonon drag , condensed matter physics , drag , phonon , physics , electron , semiconductor , anisotropy , phonon scattering , reciprocal , quantum mechanics , mechanics , thermoelectric effect , seebeck coefficient , linguistics , philosophy
A variational method of the anisotropic scattering theory is used to analyse the drag effect of electrons by phonons and of the reciprocal drag effect on the kinetic properties of semiconductors. The role of various phonon scattering mechanisms and their effect on the thermo‐e.m.f. of the drag are discussed. The temperature dependence of thermo‐e.m.f. is obtained taking into account various phonon and electron scattering mechanisms.