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High‐field conduction mechanism in amorphous germanium
Author(s) -
Telnic M.,
Vescan L.,
Croitoru N.,
Popescu C.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220590239
Subject(s) - thermal conduction , quantum tunnelling , germanium , condensed matter physics , field (mathematics) , materials science , amorphous solid , physics , chemistry , thermodynamics , optoelectronics , crystallography , mathematics , silicon , pure mathematics
Current‐voltage measurements on a‐Ge in the temperature range 77 to 143 °K and the field range 10 to 5 × 10 4 V/cm are analysed in the frame of the conduction model used to explain low‐field conduction in the T −1/4 region. In this model the conduction is due to non‐degenerate carriers tunnelling without thermal activation between localized states in two linear tails. Assuming that the high field effects concentrate essentially upon the distribution function quantitative expressions are obtained for the current which ensured a good fit to the normalized experimental data for unannealed and annealed a‐Ge.