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Elastic properties and superconductivity of V 3 Si at high pressure
Author(s) -
Carcia P. F.,
Barsch G. R.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220590227
Subject(s) - debye model , anisotropy , materials science , superconductivity , shear modulus , condensed matter physics , single crystal , crystal (programming language) , bulk modulus , analytical chemistry (journal) , thermodynamics , crystallography , chemistry , physics , optics , composite material , programming language , chromatography , computer science
The pressure derivatives of the single crystal elastic constants of V 3 Si have been measured at 77 and 298 °K, and the pressure derivative of the shear modulus c s = ( c 11 – c 12 )/2 has been measured between 37 and 298 °K. The V 3 Si crystal was of the kind which undergoes the Batterman‐Barrett low temperature structural transformation. The results differ significantly from those for nontransforming V 3 Si in that for transforming crystals (∂ c /∂ p ) T shows a negative minimum at about 80 °K and is positive below about 50 °K. This is in semiquantitative agreement with the negative pressure coefficient for the structural transformation measured by Chu. From the elastic data the elastic Grüneisen parameters and the pressure coefficients (∂ T c /∂ p ) of the superconducting transition temperature were calculated in the anisotropic Debye approximation. For nontransforming V 3 Si the calculated value of (∂ T c /∂ p ) shows the correct sign, but is two and one‐half times larger than the experimental value. The calculated (∂ T c /∂ p ) is for transforming V 3 Si considerably smaller than for nontransforming samples.