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Influence of a strong electric field on the microwave conductivity of semiconductors
Author(s) -
Iwainsky A.,
Richter Th.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220590215
Subject(s) - microwave , semiconductor , condensed matter physics , boltzmann equation , conductivity , electric field , field (mathematics) , reflection (computer programming) , bragg's law , materials science , field effect , boltzmann constant , charge carrier , physics , optics , optoelectronics , mathematics , quantum mechanics , computer science , diffraction , pure mathematics , programming language
For semiconductors the distribution function of hot charge carriers in the presence of a microwave field is investigated by means of the Boltzmann equation. Bragg reflection is taken into consideration by an expansion of the distribution function in a Fourier series. In case of constant τ approximation and sinusoidal energy bands the current density and from this the microwave conductivity are computed. For sufficient strong dc fields below the Zener frequency a significant field‐induced change of the microwave absorption results which can lead to an amplification of the microwave.