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X‐ray photoemission studies of silicon and germanium
Author(s) -
Vesely C. J.,
Kingston D. L.,
Langer D. W.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220590111
Subject(s) - germanium , silicon , fermi level , inverse photoemission spectroscopy , atomic physics , angle resolved photoemission spectroscopy , density of states , semimetal , materials science , valence band , electronic structure , electron , condensed matter physics , band gap , physics , optoelectronics , nuclear physics
X‐ray‐induced electron‐emission measurements were used to study the electronic structure of silicon and germanium in a range extending from the top of the valence band to about 1250 eV below the Fermi level. Measured core level values agree very well with previously reported values except for the splitting of the germanium 3p level and the location of the silicon 2s level. “Plasma replicas” were observed for several of the core levels and their valence band photoemission spectra are compared with theoretical density‐of‐states distributions. Two maxima in the germanium conduction‐band density of states are located by comparing the photoemission data with UV absorption data.