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A Scanning Electron Diffraction Study of Vapor‐Deposited and Ion Implanted Thin Films of Ge (II)
Author(s) -
Graczyk J. F.,
Chaudhari P.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220580209
Subject(s) - amorphous solid , materials science , diffraction , diamond , ion , chemical vapor deposition , thin film , electron diffraction , crystallography , nanotechnology , optics , chemistry , physics , composite material , quantum mechanics
The reduced intensity function and the structure factor for several models of amorphous Ge have been calculated. These include the diamond cubic, the amorphon, and a random network model. It is found that the data on amorphous Ge is best described by the random network models. Also the effect of interparticle interference function in evaluating the models is taken into account.