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Photoelectric Properties of Mg 2 Si, Mg 2 Ge, and Mg 2 Sn II. UV Excitation
Author(s) -
Cardona M.,
Tejeda J.,
Shevchik N. J.,
Langer D. W.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220580207
Subject(s) - photoelectric effect , x ray photoelectron spectroscopy , analytical chemistry (journal) , spectral line , auger , excited state , atomic physics , electron , valence (chemistry) , valence electron , auger effect , excitation , core electron , auger electron spectroscopy , chemistry , materials science , physics , nuclear magnetic resonance , optoelectronics , chromatography , astronomy , quantum mechanics , nuclear physics , organic chemistry
In the previous paper (I) the energy distribution spectra of photoelectrons (XPS) and Auger electrons (AES) excited with AlKα radiation in Mg 2 Si, Mg 2 Ge, and Mg 2 Sn were presented. Here similar measurements are reported performed with He resonant radiation (48.4, 40.8, and 21.2 eV). The effect of surface contamination by O 2 or H 2 O is shown to be very important in these UPS spectra and results meaningful of the material under study can only be obtained if such contamination is kept to less than 0.2 monolayers. The strong structure which appears in less clean samples has been identified as related to the compounds MgO and Mg(OH) 2 . The UPS spectra of the clean materials yield information about the densities of valence states and about the outermost d electrons of the Ge and Sn core. Very accurate values for the corresponding spin‐orbit splittings and chemical shifts are obtained.