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Interaction of Exciton‐Polaritons with Charged Impurities in Semiconductors
Author(s) -
Skaistys E.,
Sugakov V. I.,
Zinets O. S.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220580142
Subject(s) - exciton , impurity , semiconductor , condensed matter physics , scattering , polariton , atomic physics , physics , optics , optoelectronics , quantum mechanics
The retarded exciton Green's function G (ω) is calculated for semiconductors with randomly distributed impurities. The expression of the exciton absorption band shape due to polariton scattering by charged impurities is obtained using a relation between the complex conductivity tensor σ α β (ω) and G (ω). The band shape is of Lorentz type with Γ depending on the frequency, Γ(ω) = ( h /2) v n c (σ 22 0+ σ 21 0 ), where v is the velocity of the light generated exciton, σ 22 0and σ 21 0are the cross sections of elastic and inelastic S ‐scattering by an isolated charged impurity, n c the charged impurity concentration. Numerical calculations concerning CdS and GaAs have been made. This band broadening mechanism may be dominant at high impurity concentrations.