Premium
High‐Field Transport: Collision Integrals for Small Band Gap Semiconductors
Author(s) -
Stokoe T. Y.,
Cornwell J. F.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220580126
Subject(s) - scattering , collision , semiconductor , condensed matter physics , physics , impurity , polar , band gap , phonon , phonon scattering , ionized impurity scattering , optics , quantum mechanics , computer security , computer science
Collision integrals are derived for polar optical, acoustic, and intervalley phonon scattering, ionised impurity scattering and carrier—carrier scattering. The full effects of band structure non‐parabolicity are taken into account.