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Modulated Spectroscopy of Cubic Semiconductors. Calculation of Piezomodulation Parameters for Degenerate Semiconductors
Author(s) -
Mathieu H.,
Auvergne D.,
Camassel J.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220580122
Subject(s) - semiconductor , degenerate energy levels , excited state , condensed matter physics , materials science , spectroscopy , valence (chemistry) , modulation (music) , degenerate semiconductor , band gap , molecular physics , chemistry , physics , atomic physics , optoelectronics , quantum mechanics , acoustics
The effects of a modulating strain on an M 0 critical point structure in reflectivity are considered for a study of degenerate semiconductors for which the kinetic energy of excited carriers is greater than the energy threshold modulation. Using the Pikus‐Bir formalism to describe the strain induced change in the valence band of cubic compounds, optical matrix elements and modulation amplitudes for several strain arrangements are calculated. For (001) and (111) strains, it is shown that the strain modulated part of Δ R can be described by an effective modulation ΔẼ g which is independent of the kind of carriers (light or heavy holes) involved in the transition.