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A Scanning Electron Diffraction Study of Vapor‐Deposited and Ion Implanted Thin Films of Ge (I)
Author(s) -
Graczyk J. F.,
Chaudhari P.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220580116
Subject(s) - materials science , amorphous solid , crystallite , thin film , crystallization , analytical chemistry (journal) , ion , scanning electron microscope , diffraction , electron diffraction , crystallography , chemistry , optics , nanotechnology , composite material , physics , organic chemistry , chromatography , metallurgy
The structure of Ge films evaporated by several methods onto room temperature substrates of NaCl and films which have been ion implanted with 3 × 10 15 , 30 to 40 ke V Ge 74 has been investigated via a scanning electron diffraction instrument with electron energy filtering. The radial distribution functions of all films are very similar and exhibit strong correlation peaks at 2.45, 4.00, and (4.85 ± 0.075) Å with coordinations of 4, 12, and ≈ 7, respectively. The remaining major peaks for higher r deviate substantially from the diamond cubic form of Ge. From the RDF analysis a density ratio ϱ 0 /ϱ cryst of 0.86 to 0.95 is determined. Thermal anneal experiments showed that the films may be annealed to a density of ≈0.97 of crystalline density without crystallization. Amorphous films which have been ion implanted with the same energy and dose as the polycrystalline films show a considerable concentration of pores and voids of a maximum diameter of 100 Å. The RDF, however, is identical to the as‐deposited film with the exception of some changes in the correlation for r greater than 11 Å.