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Non‐Adiabatie Calculation of the Binding Energy of the Exeiton–Neutral Donor Complex in Semiconductors
Author(s) -
Munschy G.,
Cababatos C.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220570210
Subject(s) - adiabatic process , diagonal , exciton , coupling (piping) , physics , semiconductor , adiabatic theorem , mass ratio , binding energy , particle (ecology) , energy (signal processing) , chemistry , atomic physics , quantum mechanics , mathematics , materials science , geometry , oceanography , astrophysics , metallurgy , geology
A new non‐adiabatic method of calculation is presented and applied t o the case of an exciton + − bound to a neutral donor ⊕ −. The one‐particle equation deduced is analogous to Born's nuclear equation, but non‐diagonal coupling terms are not involved. Moreover, as shown by the numerical results obtained, the ⊕ + − − complex becomes unstable for intermediate values of the electron to hole effective mass ratio.