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Optical absorption associated with superlattice in silicon carbide crystals
Author(s) -
Dubrovskii G. B.,
Lepneva A. A.,
Radovanova E. I.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220570142
Subject(s) - superlattice , silicon carbide , materials science , absorption (acoustics) , silicon , wavelength , lattice (music) , crystallography , molecular physics , optics , optoelectronics , chemistry , physics , acoustics , metallurgy , composite material
Absorption of polarized light in the near IR and visible region has been measured in n‐type silicon carbide crystals of seven modifications: 4H, 6H, 8H, 15R, 27R, 33R, and 21R. All the samples showed clearly resolved polarized absorption bands at wavelengths characteristic for each crystal structure. It is shown that the energy position, temperature behaviour, and selection rules for these bands are in good agreement with those predicted theoretically for interminizone transitions in the Superlattice. The period of the super‐lattice is identified for several groups of SiC structures defined according to the principle of their unit cell formation.