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On the description of multiple scattering processes in amorphous and crystalline semiconductors
Author(s) -
Maschke K.,
Overhof H.,
Thomas P.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220570123
Subject(s) - scattering , amorphous semiconductors , semiconductor , amorphous solid , connection (principal bundle) , function (biology) , decomposition , condensed matter physics , computational physics , materials science , physics , chemistry , quantum mechanics , mathematics , crystallography , geometry , organic chemistry , evolutionary biology , biology
The electronic properties of amorphous semiconductors can be calculated from the configurational averaged Green's function. In this method the atomic structure of the system is incorporated into the scattering correlation function (SCF). To get a tractable form, the SCF is factorized into products of two‐center SCF's. The approximations involved in this decomposition are discussed. A comparison is made to similar approximations common in KKR energy band calculations for crystals (Ewald's summation technique). The connection with scattering by “frozen” hot crystals is demonstrated. For the amorphous case, it is shown that at least one and two‐center scattering contributions to the Green's function can be treated correctly.