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Influence of acceptor concentration on the hall effect in tellurium
Author(s) -
Bastard G.,
Hau Nguyen Hy,
Rigaux C.,
Vieren J. P.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220570109
Subject(s) - acceptor , impurity , tellurium , hall effect , valence band , condensed matter physics , valence (chemistry) , doping , charge carrier density , magnetic field , materials science , chemistry , band gap , physics , inorganic chemistry , organic chemistry , quantum mechanics
Experimental observations and new theoretical calculations are given of the impurity influence on the valence band population in tellurium. Galvanomagnetic measurements were performed at temperatures between 1.6 and 77 K, in magnetic fields up to 60 kG, on samples with acceptor concentrations from 10 14 to 2 × 10 16 cm –3 . The temperature and the magnetic field dependences of the Hall coefficient R 1 in low doped samples ( N A < 2 × 10 15 cm –3 ) is quantitatively explained by the “two acceptor levels” model proposed by Thanh. Results observed for a higher density of acceptors show the presence of an impurity band above the valence band.