Premium
Valence Band Structure of CdTe
Author(s) -
Čápek V.,
Zimmerman K.,
Koňák Č.,
Popova M.,
Polivka P.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220560239
Subject(s) - cadmium telluride photovoltaics , valence (chemistry) , valence band , electronic band structure , doping , semimetal , materials science , quasi fermi level , chemistry , molecular physics , condensed matter physics , physics , band gap , optoelectronics , organic chemistry
The valence band structure near the I‐point in CdTe has been investigated. Experimentally, the absorption curves obtained for p‐type CdTe doped with Te, P, As are presented, discussed, and compared with theory [18]. This comparison yields the ratios of the hole effective masses m * 1 / m * 2 ; = 7.5 and m * 1 / m * 3= 5. The theoretical valence band structure near the r‐point is fitted to correspond with the optical absorption measurements.