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The Effect of a Short‐Range Three‐Body Potential on the Energy of Formation of Schottky Defects in Some Ionic Crystals
Author(s) -
Chowdhury S.,
Sen S. H.,
Roy D.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220560141
Subject(s) - ionic bonding , range (aeronautics) , van der waals force , schottky diode , displacement (psychology) , energy (signal processing) , materials science , atomic physics , chemistry , condensed matter physics , ion , physics , optoelectronics , quantum mechanics , molecule , composite material , psychology , organic chemistry , diode , psychotherapist
The energy of formation of Schottky defects in LiF, NaCI, NaBr, and NaI is calculated including Van der Waals and the short‐range three body potential proposed by Sarkar and Sengupta in the Mott and Littleton scheme. The elastic displacement of the distant neighbours is taken in the form proposed by Boswarva and Lidiard. Due to the uncertainty in the experimental values of the elastic constants, the estimate of the three body contribution is only approximative. Considering the wide range of the experimental values of the energy of formation of Schottky defects the agreement between the calculated and experimental values is satisfactory excepting the case of NaI for which the experimental value seems to be high.