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Multiple Scattering Theory and Pseudogaps in Amorphous Covalent Semiconductors
Author(s) -
John W.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220550238
Subject(s) - pseudogap , hamiltonian (control theory) , condensed matter physics , amorphous semiconductors , density of states , scattering , semiconductor , covalent bond , amorphous solid , materials science , density functional theory , physics , quantum mechanics , chemistry , crystallography , mathematics , doping , mathematical optimization , cuprate
The electronic density of states of amorphous covalent semiconductors is investigated using the multiple scattering theory of nonoverlapping muffin‐tin potentials. In the nearest neighbour approximation an expression is derived for the density of states which relates it to the density of states of a simple tight‐binding Hamiltonian. Numerical calculations for amorphous sps‐bonded C and amorphous Si show the existence of a pseudogap which is determinated by short‐range order.