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Impurity‐Induced First‐Order Raman Spectrum in Cesium Halides
Author(s) -
Ram P. N.,
Agrawal Bal K.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220550230
Subject(s) - raman spectroscopy , impurity , raman scattering , halide , caesium , phonon , x ray raman scattering , infrared , chemistry , perturbation theory (quantum mechanics) , atomic physics , force constant , molecular physics , materials science , optics , condensed matter physics , physics , inorganic chemistry , molecule , quantum mechanics , organic chemistry
A theoretical study of impurity‐induced first‐order Raman scattering has been made in cesium halides. The defect model parameters obtained earlier by the analysis of infrared absorption experiments have been used in the calculation. The frequency dependence of the Raman intensity is found to be quite insensitive to variations in the force constants describing the defects. The Raman technique may therefore be employed for detailed study of the perfect phonon without having a detailed knowledge of the defect perturbation.