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A Model of the Electrical Transport Phenomena in Imperfect Crystals of Copper Phthalocyanine. I. Basic Ideas and Treatment of Bulk Defects
Author(s) -
Lehmann G.,
Hamann C.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220550214
Subject(s) - perturbation (astronomy) , molecule , crystal (programming language) , copper , imperfect , electron , copper phthalocyanine , chemical physics , condensed matter physics , materials science , molecular physics , physics , crystallography , chemistry , quantum mechanics , computer science , optoelectronics , linguistics , philosophy , metallurgy , programming language
Abstract Starting from the needed simplification of the problem a model is proposed, approximating the real crystal by molecule stacks, consisting of perfectly conducting molecule discs. In this way a band scheme is found, very similar t o the observed one. On the understanding that molecule stacks break off within the crystal and considering the molecule spatial extent and molecule orientation in CuPc, the perturbation levels in the crystals are computed. They are found in a good agreement with experimentally determinedtrap levels for electrons. The geometrical extent of the perturbation justifies the neglect of the perturbation interaction between adjacent piles.