Premium
Determination of Optical Constants: a‐Si
Author(s) -
Jungk G.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220550213
Subject(s) - pseudogap , extrapolation , materials science , exciton , void (composites) , dielectric , dielectric function , band gap , condensed matter physics , analytical chemistry (journal) , molecular physics , physics , chemistry , optoelectronics , doping , mathematical analysis , cuprate , mathematics , chromatography , composite material
Optical studies of a‐Si samples are reported. The dielectric function was determined ellipsometrically from 2.0 to 4.0 eV. Different concentrations of slit‐like voids may account for the variation of the optical constants in the investigated films. The depolarization factor L of the voids was estimated to 0.75 5 ≦ L ≦ 0.9. A structure of the optical constants near 3.5 eV indicates an exciton‐like transition. The extrapolation of the hv √ E 2 eff curves points to a pseudogap of the ideal a‐Si comparable with the indirect gap of the crystalline phase. These pseudogaps increase with increasing void‐concentration.