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Transverse Dember Effect and Anisotropy of Carrier Mobilities in Tellurium Single Crystals
Author(s) -
Genzow D.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220550210
Subject(s) - tellurium , anisotropy , condensed matter physics , scattering , relaxation (psychology) , electron , hall effect , isotropy , electron mobility , materials science , electrical resistivity and conductivity , transverse plane , photoconductivity , optics , physics , optoelectronics , psychology , social psychology , structural engineering , engineering , quantum mechanics , metallurgy
Neasurenients have been made of the transverse Dember effect, photoelectromagnetic effect, Hall effect, and electrical conductivity of tellurium single crystals in the temperature range from 80 to 300 K. From this data information about magnitude and anisotropy of electron and hole mobilities have been deduced. The relaxation time for scattering of holes and electrons in tellurium single crystals without structure defects is nearly isotropic. The relaxation time for scattering by dislocations is characterized by the relation .