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Phonon Assisted Interband Optical Transitions in Disordered Semiconductors
Author(s) -
Esser B.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220550205
Subject(s) - semiconductor , condensed matter physics , attenuation coefficient , phonon , absorption (acoustics) , band gap , quadratic equation , exponential function , direct and indirect band gaps , field dependence , field (mathematics) , inverse , physics , materials science , quantum mechanics , optics , mathematics , magnetic field , mathematical analysis , geometry , pure mathematics
The absorption coefficient of a disordered semiconductor, α(ω), is calculated in the case of indirect transitions. The absorption coefficient is influenced by a random force field present in disordered semiconductors. The case of a smooth random field is considered. The same exponential optical tail is obtained as in the case of direct transitions: In α(ω) ∼ S (ℏω – ℰ g ,i), where S is the inverse of some characteristic energy and ℰ g , 1 is the indirect band gap. Par enough in the allowed band the absorption coefficient takes on the usual quadratic frequency dependence.