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Transverse Magnetoresistance of n‐Type Ge in Quantizing Magnetic Fields
Author(s) -
Babich V. M.,
Baranskii P. I.,
Korolyuk S. L.,
Samoilovich A. G.,
Chelova T. N.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220550148
Subject(s) - condensed matter physics , magnetic field , phonon , anisotropy , physics , magnetoresistance , scattering , transverse plane , quantization (signal processing) , quantum mechanics , structural engineering , engineering , computer science , computer vision
Abstract The anisotropy and the magnetic field dependences of ϱ⟂H/ϱ 0 were investigated on n‐Ge (n e ≈ 1.59 × 1013 × m −3 cm −3 ) in the range of dominant phonon scattering (at 77 °K) in quantizing magnetic fields (up to 250 kOe). The developed theory is in quantitative accordance with the experimental data. It is shown that: the difference of magnetic field dependences ϱ⟂/H/ϱ 0 = f(H) for H ‖ [001] or [011] (both at j ‖ [100] and at j ‖ [110]) is caused by the effect of intervalley redistribution of current carriers in quantizing H; the crystal imperfections (type of Herring statistically distributed inhomogenities) do not reveal itself noticeably at the quantization.