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Analysis of Point Defect States in Copper V. Temperature Dependence of the Defect Production by Electron Irradiation
Author(s) -
Becker D. E.,
Dworschak F.,
Wollenberger H.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220540209
Subject(s) - vacancy defect , copper , materials science , radius , irradiation , crystallographic defect , atmospheric temperature range , diffusion , electron , electron beam processing , atomic physics , range (aeronautics) , condensed matter physics , nuclear physics , metallurgy , thermodynamics , physics , composite material , computer security , computer science
The temperature dependence of the defect production has been investigated by irradiating high purity copper samples with 3 MeV electrons in the temperature range 50 to 207 K. From the initial damage rate the capture radius of the vacancy for migrating interstitials is derived. The observed temperature dependence of the capture radius can be accounted for by a drift diffusion of the interstitials in the elastic strain field of their native vacancy.