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The E(k) Relation for a Two‐Band Scheme of Semiconductors and the Application to the Metal‐Semiconductor Contact
Author(s) -
Flietner H.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220540119
Subject(s) - semiconductor , band gap , ionic bonding , intrinsic semiconductor , condensed matter physics , materials science , scheme (mathematics) , physics , optoelectronics , mathematics , quantum mechanics , mathematical analysis , ion
The E ( k ) behaviour is calculated for a two‐band scheme as an approximation for the vicinity of the forbidden gap of a semiconductor. An estimate is given for the validity of the effective mass approximation in the forbidden gap. Application is made to the metal‐semiconductor contact and it is shown that this model describes the experiments for semiconductors ranging from covalent to the ionic type.