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Recombination in Semiconductors by Excitation of Plasmons
Author(s) -
Tussing P.,
Rosenthal W.,
Haug A.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220530206
Subject(s) - plasmon , recombination , excitation , semiconductor , spontaneous emission , doping , non radiative recombination , electron , recombination rate , atomic physics , carrier generation and recombination , radiative transfer , condensed matter physics , materials science , physics , optoelectronics , chemistry , semiconductor materials , optics , quantum mechanics , laser , biochemistry , gene
In a highly doped semiconductor excitation of plasmons is shown to be an effective mechanism for electron‐hole recombination. If the carrier concentration is sufficiently high the corresponding recombination rate overwhelms that for the radiative process by orders of magnitude.