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On the Exciton Binding to Neutral Impurities in Semiconductors
Author(s) -
Munschy G.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220530141
Subject(s) - exciton , binding energy , dissociation (chemistry) , acceptor , impurity , semiconductor , chemistry , atomic physics , biexciton , electron , mass ratio , physics , condensed matter physics , quantum mechanics , organic chemistry , astrophysics
It is shown that the complex consisting of an exciton bound to a neutral donor (or acceptor) is not always stable. There is an intermediate range of values of the electron to hole effective‐mass ratio σ for which the complex becomes unstable against the dissociation into an exciton and a neutral donor (or acceptor). Furthermore, in the so delimited H 2 ‐like region of stability of the complex, the binding energy expressed in atomic units is shown to vary monotonically with the mass ratio σ up to a critical value àc (1 < σc < 2) which corresponds to the dissociation limit.