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The Temperature Dependence of the Absorption Edge in Some Amorphous Semiconductors
Author(s) -
Connell N.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220530122
Subject(s) - amorphous semiconductors , amorphous solid , superposition principle , conduction band , valence (chemistry) , absorption edge , semiconductor , condensed matter physics , thermal conduction , band gap , valence band , enhanced data rates for gsm evolution , materials science , chemistry , crystallography , physics , optoelectronics , quantum mechanics , telecommunications , computer science , composite material , electron , organic chemistry
The implicit and explicit contributions to the temperature dependence of the absorption edge in some amorphous forms of Si, Ge, GaP, and GaAs are reported. The results are used to test a model in which the valence (conduction) band states in amorphous material are a superposition of crystalline valence (conduction) band states of about the same energy. In the case of the III–V compounds, it is concluded that such a model may be invalid owing to the probable existence of “wrong” bonds.