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An Anisotropic Photon Drag Effect in Nonspherical‐Band Cubic Semiconductors
Author(s) -
Valov P. M.,
Ryvkin B. S.,
Ryvkin S. M.,
Yaroshetskii I. D.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220530106
Subject(s) - physics , transverse plane , condensed matter physics , anisotropy , drag , photon , electric field , current (fluid) , semiconductor , electric current , optics , quantum mechanics , mechanics , structural engineering , engineering , thermodynamics
The observation and a study of an anisotropy is reported of the photon drag hole current induced by linearly polarized CO 2 laser light in p‐Ge and p‐InSb, which is due to the non‐spherical structure of the isoenergetic surfaces in the valence band. Besides the drag current longitudinal with respect to the photon momentum, a transverse current component appears in cases where the direction of light propagation is not along the [100] axis. The transverse current is an oscillatory function of the angle between the electric field vector and the orientation of the transverse contacts. The magnitude of longitudinal current and its polarity reversal temperature in p‐Ge depend to a considerable extent on the crystallographic orientation of the samples with respect to the photon momentum. The experimental data are in agreement with the theory.