Premium
Non‐Even Dependence of Conductivity of Hot Electrons on Magnetic Field Strength in Many‐Valley Semiconductors
Author(s) -
Asche M.,
Sarbei O. G.,
Savyalov Yu. G.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220520242
Subject(s) - condensed matter physics , magnetic field , conductivity , electron , transverse plane , impurity , electric field , electrical resistivity and conductivity , semiconductor , materials science , current (fluid) , field (mathematics) , orientation (vector space) , physics , geometry , quantum mechanics , mathematics , thermodynamics , optoelectronics , structural engineering , pure mathematics , engineering
The transverse magnetoresistivity of n‐Si with different impurity densities was investigated theoretically and experimentally for a nonsymmetrical orientation of the current in strong electric fields. The experimental results for the linear change of conductivity with respect to the magnetic field are compared with numerical data and qualitative agreement is shown.