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Optical Absorption Edge of Heavily Doped Semiconductors at Low Temperatures
Author(s) -
Van Cong H.,
Mesnard G.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220520224
Subject(s) - doping , absorption edge , semiconductor , enhanced data rates for gsm evolution , absorption (acoustics) , electron , condensed matter physics , feynman diagram , magnetic semiconductor , field (mathematics) , chemistry , physics , materials science , optics , quantum mechanics , mathematics , band gap , telecommunications , computer science , pure mathematics
Using the Green function methods in the Feynman‐path integral formulation, applied to disordered systems and developed already in previous papers, the optical absorption edge of heavily doped semiconductors in zero magnetic field at low temperatures is investigated. Two band‐structure models are used here and the absorption coefficeint is calculated directly from the Greenwood formula in the one‐electron approximation. Two examples concerning Ge and GaAs are discussed assuming that one excess electron is provided by each donor.