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Core Levels of III‐V Semiconductors
Author(s) -
Gudat W.,
Koch E. E.,
Yu P. Y.,
Cardona M.,
Penchina C. M.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220520220
Subject(s) - core (optical fiber) , atomic physics , reflection (computer programming) , semiconductor , conduction band , spectral line , absorption (acoustics) , absorption spectroscopy , density of states , materials science , electron , condensed matter physics , physics , optics , optoelectronics , nuclear physics , astronomy , computer science , composite material , programming language
The absorption and reflection spectra of GaP, GaAs, GaSb, InP, InAs, and InSb in the region from 15 to 40 eV are presented and compared with those obtained from characteristic electron energy losses. From these data, information about the density of conduction states, the matrix elements for transitions from the outermost core levels to the conduction bands, and the energy and spin‐orbit splittings of those core levels is obtained. X‐ray photoemission data (ESCA) in the region from 10 to 1487 eV are also presented and compared with the results of absorption and emission spectroscopy.