Low‐Temperature Recovery of Magnetic After‐Effect and Electrical Resistivity of Electron‐Irradiated Nickel | Zendy

Lampert G. | Zendy; Schaefer H. E. | Zendy

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Low‐Temperature Recovery of Magnetic After‐Effect and Electrical Resistivity of Electron‐Irradiated Nickel

Author(s) -

Lampert G.,

Schaefer H. E.

Publication year - 1972

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2220520216

Subject(s) - electrical resistivity and conductivity , nickel , annealing (glass) , irradiation , activation energy , materials science , electron beam processing , electron , analytical chemistry (journal) , nickel compounds , condensed matter physics , nuclear magnetic resonance , chemistry , metallurgy , electrical engineering , physics , nuclear physics , chromatography , engineering

The recovery of high‐purity nickel electron irradiated at 27 K has been observed by simultaneous measurement of the electrical resistivity and the magnetic after‐effect (MAE). A strong MAE observed at about 55 K anneals out in the substages I D and I E simultaneously with the electrical resistivity. In both stages I D and I E the same value of the activation energy of recovery E M = (0.155 ± 0.02) cV was found from both types of measurement. Models describing the recovery in stages I D and I E in nickel by the annealing of a single type of defect configuration are strongly supported.

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