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Hole Transport in Polar Semiconductors
Author(s) -
Costato M.,
Jacoboni C.,
Reggiani L.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220520215
Subject(s) - polar , scattering , condensed matter physics , semiconductor , degenerate energy levels , valence (chemistry) , compound semiconductor , monte carlo method , cadmium telluride photovoltaics , chemistry , physics , materials science , optics , quantum mechanics , nanotechnology , epitaxy , mathematics , statistics , layer (electronics)
The transport properties of holes in cubic semiconductors have been studied with a Monte Carlo technique taking into account polar scattering within and between the two valence bands degenerate at K = 0. The predominant p‐like symmetry of the valence band wave functions has been found to enhunce the polar ohmic mobility of about a factor two with respect to the case in which it is neglected. The comparison between theoretical results and experimental data evidences the dominant importance of polar scattering mechanism for a typical II‐VI compound (CdTe)in the region of temperatures between 100 and 400 °K. On the contrary, this scattering mechanism alone cannot explain the low field transport of a typical III‐V compound (GaAs) in the same temperature range, according to its lower ionicity.