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Measurement of Microwave Faraday Effect in n‐Type Silicon
Author(s) -
Srivastava G. P.,
Mathur P. C.,
Kumar A.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220520131
Subject(s) - faraday effect , impurity , scattering , silicon , condensed matter physics , anisotropy , magnetic field , faraday rotator , faraday cage , rotation (mathematics) , microwave , lattice (music) , magneto optic effect , materials science , physics , optics , atomic physics , optoelectronics , quantum mechanics , mathematics , acoustics , geometry
Measurements of the Faraday rotation in n‐type silicon have been performed at room and at low (93 °K) temperatures. A crossed‐waveguide technique (18.0 to 26.5 GHz), similar in principle (but in a simplified form) to the technique of Bouwknegt and Volger [4], has been used for the measurements. The rotation has been studied as a function of de magnetic field up to 10 kOe. The effect of multiple reflections has also been studied at low temperatures. The theory of the Faraday effect in anisotropic n‐silicon, previously developed by the authors [3], is modified taking into account the contribution of mixed scattering of lattice and impurities. The modified theory is compared with the experiment, and an estimation is made of the relative importance of the impurity over the lattice scattering. It is shown that impurity scattering gives an appreciable contribution to the rotation.