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Dislocations in Piezoelectric Semiconductors
Author(s) -
Faivre G.,
Saada G.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220520115
Subject(s) - dislocation , piezoelectricity , semiconductor , condensed matter physics , trapping , materials science , core (optical fiber) , partial dislocations , optoelectronics , physics , composite material , ecology , biology
Previous results on dislocations in piezoelectric insulating crystals are extended and the possibility of trapping charges at the core of a given dislocation is discussed. The electrical potential associated with a dislocation is explicitly calculated for Te crystals. The case of screening by free carriers in a semiconductor is then treated and a general solution for the potential is given. Physical consequences are described.