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Electron States in Crystals with “nipi‐Superstructure”
Author(s) -
Döhler G. H.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220520109
Subject(s) - superstructure , condensed matter physics , zigzag , impurity , materials science , electron , crystal (programming language) , perpendicular , semiconductor , valence (chemistry) , doping , physics , optoelectronics , quantum mechanics , geometry , mathematics , computer science , thermodynamics , programming language
A semiconductor with a zigzag‐shaped superstructure potential, caused by the introduction of narrow n‐and p‐doped layers into an intrinsic crystal (“nipi‐crystal”), is considered. For high amplitude and long period of this potential the low lying conduction‐ and the upper valence‐subband states are concentrated around the n‐and p‐layers, respectively. The subbands, as obtained for an idealised mode, neglecting fluctuations of the superstructure potential, are extremely narrow with respect to the direction perpendicular to the layers. Approximative calculations show, that the discrete subband structure should be clearly distinct also if electron‐impurity and electron‐phonon interaction is taken into account. The density of states in crystals with “nipi‐superstructure” is completely different from that in the corresoponding n‐ and p‐doped normal crystals. A non‐equilibrium situation can be quasi‐stable due to the low electron‐hole recombination probality.