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Ordinary Magnetoresistance of Heavily Doped Semiconductors at Low Temperatures in a Weak Magnetic Field
Author(s) -
van Cong H.,
Mesnard G.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220510237
Subject(s) - magnetoresistance , doping , condensed matter physics , semiconductor , magnetic field , electron , feynman diagram , impurity , field (mathematics) , magnetic semiconductor , physics , materials science , mathematics , quantum mechanics , pure mathematics
The ordinary longitudinal and transverse magnetoresistance of electrons at low temperatures in a weak magnetic field is calculated from a simplified model of heavily doped semiconductors. The treatment which is based on the Green's function methods using Feynman‐path integral formulation, is applied to disordered systems and developed already in five previous papers. Two important cases are discussed within the present model. In the first one, an ordinary n‐type semiconductor is considered, assuming that the carrier concentration is equal to the donor concentration; in the second case, the carrier concentration rises as the third root of the total concentration of impurities.