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Weak Magnetic Field Dependence of the Thermoelectric Effect in Heavily Doped Semiconductors at Low Temperatures
Author(s) -
van Cong H.,
Mesnard G.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220510126
Subject(s) - doping , semiconductor , thermoelectric effect , condensed matter physics , impurity , magnetic field , feynman diagram , materials science , magnetic semiconductor , path integral formulation , physics , thermodynamics , quantum mechanics , optoelectronics , quantum
The field dependence of the thermoelectric effect is studied, using a simplified model of heavily doped semiconductors, by Green's function methods and the Feynman‐path integral formulation applied to disordered systems, already developed in five previous papers. Two important cases are discussed. In the first, an ordinary n‐type semiconductor is considered, assuming that the carrier concentration is equal to the donor one; in the second, the carrier concentration is rised as the third root of the total concentration of impurities.