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The optical properties of GaAs:Co
Author(s) -
Baranowski J. M.,
Grynberg M.,
Magerramov E. M.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220500202
Subject(s) - acceptor , cobalt , impurity , valence (chemistry) , ionization , valence band , gallium , electron , atomic physics , materials science , ionization energy , shallow donor , valence electron , crystal (programming language) , absorption spectroscopy , crystal field theory , absorption edge , condensed matter physics , chemistry , band gap , ion , physics , optoelectronics , optics , computer science , programming language , metallurgy , organic chemistry , quantum mechanics
The absorption due to optical transitions from the valence band to empty cobalt‐acceptor states in GaAs has been investigated. The results are well explained in terms of Lucovsky's model, and the hole ionization energy of 0.14 eV was determined. The crystal‐field spectrum of the 3d 7 configuration is observed when the acceptor states are filled by electrons from shallow donors. The experimental results indicate that the acceptor state is due to hole in 3d‐shell of the cobalt impurity on substitutional gallium sites.