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Photoconductivity associated with free excitons in GaAs
Author(s) -
Richard C.,
Dugue M.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220500130
Subject(s) - photoconductivity , exciton , free electron model , free carrier , excitation , ionization , dissociation (chemistry) , materials science , impact ionization , biexciton , atomic physics , condensed matter physics , electron , chemistry , optoelectronics , physics , ion , quantum mechanics , organic chemistry
A peak of photoconductivity associated with free excitons has been observed in GaAs. This peak has been investigated as a function of the free electron density, the temperature, and the excitation intensity. A model which takes into account the dissociation of free excitons on ionized acceptors is presented to explain the presence of this peak.