Photoconductivity associated with free excitons in GaAs | Zendy

Richard C. | Zendy; Dugue M. | Zendy

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Photoconductivity associated with free excitons in GaAs

Author(s) -

Richard C.,

Dugue M.

Publication year - 1972

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2220500130

Subject(s) - photoconductivity , exciton , free electron model , free carrier , excitation , ionization , dissociation (chemistry) , materials science , impact ionization , biexciton , atomic physics , condensed matter physics , electron , chemistry , optoelectronics , physics , ion , quantum mechanics , organic chemistry

A peak of photoconductivity associated with free excitons has been observed in GaAs. This peak has been investigated as a function of the free electron density, the temperature, and the excitation intensity. A model which takes into account the dissociation of free excitons on ionized acceptors is presented to explain the presence of this peak.

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