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Intrinsic localized surface states in GaAs
Author(s) -
Ball G.,
Morgan D. J.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220500123
Subject(s) - pseudopotential , brillouin zone , surface states , wave function , band gap , condensed matter physics , surface (topology) , plane wave , electronic band structure , plane (geometry) , cleavage (geology) , position (finance) , chemistry , physics , atomic physics , molecular physics , materials science , optics , geometry , mathematics , fracture (geology) , composite material , finance , economics
Surface states at the cleavage plane of GaAs with energy in the band gap of the bulk band structure and with wave vector corresponding to the point γ at the centre of the [110] surface Brillouin zone are calculated using the empirical pseudopotential method, K · p theory, and the method of matching wavefunctions. The results differ markedly from those previously reported for GaAs in that, when the matching plane is situated midway between two atomic layers, not one but two localized surface states are found. When the matching plane is displaced from the central position, however, one of these localized states disappears from the band gap.