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Thermoelectric effects of heavily doped semiconductors at low temperatures
Author(s) -
van Cong H.,
Mesnard G.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220500106
Subject(s) - thermoelectric effect , doping , semiconductor , feynman diagram , condensed matter physics , path integral formulation , materials science , engineering physics , function (biology) , physics , optoelectronics , thermodynamics , quantum mechanics , quantum , evolutionary biology , biology
Using the Green function methods, in the Feynman‐path integral formulation, applied to disordered systems and developed already in four previous papers, the thermoelectric effects at low temperatures are studied from a simplified model of heavily doped semiconductors. Two typical cases concerning the relation between the carrier and the donor concentrations are discussed.