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Impurity conductivity in low compensated semiconductors
Author(s) -
Efros A. L.,
Shklovskii B. I.,
Yanchev I. Y.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220500105
Subject(s) - impurity , thermal conduction , condensed matter physics , semiconductor , compensation (psychology) , conductivity , activation energy , materials science , value (mathematics) , physics , chemistry , thermodynamics , mathematics , quantum mechanics , statistics , psychology , optoelectronics , psychoanalysis
A theory of the temperature and concentration dependence of the impurity conduction in low compensated semiconductors is presented. For the activation energy the expression ε 3 = 0.99 (e 2 / x ) N D 1/3(1 − 0.43 v K 1/4 ) is derived, where N D is the majority impurity concentration, K is the degree of compensation, and v is a numerical factor whose value is likely to be about 0.7. This expression essentially differs from the well known result of Miller and Abrahams. It is shown that the above dependence isin good agreement with available experimental data.