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Optical spin orientation of non‐equilibrium electrons in GaAs and GaAsAlAs solid solution
Author(s) -
Dzhioev R. I.,
Fleisher V. G.,
Kanskaya L. M.,
Ninu O. A.,
Zakharchenya B. P.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220500104
Subject(s) - electron , excited state , circular polarization , spins , condensed matter physics , materials science , crystal (programming language) , radiation , semiconductor , atomic physics , polarization (electrochemistry) , wavelength , relaxation (psychology) , molecular physics , magnetic field , chemistry , physics , optics , optoelectronics , psychology , social psychology , quantum mechanics , computer science , programming language
The results of optical orientation investigation of electron spins in semiconductors excited by circularly polarized light are reported. The occurrence of orientation is due to the presence of spin‐orbit splitting of the valence band. The effect has been investigated by measuring the degree q of circular polarization of the recombination radiation and has been observed in GaAs crystals and the solid solution GaAsAIAs. The dependencies of q on the wavelength of the exciting light have been obtained at 77 and 4.2° K. It has been found that in the case of GaAs crystal E increases and on the contrary, decreases in the solid solution, with temperature decreasing from 77 to 4.2 °K. Depolarization of radiation in an outer magnetic field has been investigated and the lifetimes T of nonequilibrium carriers and the times of spin relaxation τ s , are determined. For the GaAs crystal τ (77 °K) = (1.4 ± 0.2) × × 10 −10 s and τ s (77 °K) = (2.8 ± 0.6) × 10 −10 s is found. These values increase with decreasing temperature and at 4.2 °K become equal to (2.4 ± 0.3) × 10 −10 s and (8.0 ± 1.5) × × 10 −10 s, respectively. In the case of GaAs‐AIAs t and T, have been found with an accuracy determined by the magnitude of the g‐factor.