Premium
Excitons in ZnS crystals with stacking faults
Author(s) -
Ryskin A. I.,
Suslina L. G.,
Khilko G. I.,
Shadrin E. B.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220490250
Subject(s) - exciton , stacking , spectral line , excited state , crystal (programming language) , materials science , condensed matter physics , stacking fault , ground state , crystallography , molecular physics , chemistry , atomic physics , physics , organic chemistry , astronomy , computer science , programming language
The exciton reflection spectra of ZnS crystals with stacking faults have been investigated at 4.2 °K. It has been found that in the range of available concentration of stacking faults (0 <α<0.35) (and especially at α = 0.1 to 0.2) the shift and splitting of the ground state ( n = 1) exciton lines are considerably smaller than it should be expected in the case of linear dependence of these values on α. Spectra of ZnS crystals with a high concentration of stacking faults (α = 0.3) have a doublet structure of the B exciton line. It has been shown that this effect is due to the exchange interaction of the ground exciton state in ZnS crystals. An analogy between the spectra of crystals with stacking faults and the spectra of sphalerite crystals under tension along 〈III〉 is pointed out. The study of the spectra of ZnS crystals with stacking faults has shown that the exchange interaction of the excited exciton state does not need to be considered.