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Optical properties of amorphous III–V compounds. II. Theory
Author(s) -
Kramer B.,
Maschke K.,
Thomas P.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220490214
Subject(s) - amorphous solid , amorphous semiconductors , semiconductor , band gap , materials science , spectral line , matrix (chemical analysis) , condensed matter physics , optoelectronics , analytical chemistry (journal) , crystallography , chemistry , physics , quantum mechanics , composite material , chromatography
Two methods have been used to calculate the ε 2 ‐spectra of amorphous IV‐IV and III‐V semiconductors: The “Complex‐band structure” (CBS‐)method and the “non‐direct transition” (NDT‐)method including energy dependent matrix elements. Both methods start with the calculation of the electronic properties of the corresponding crystals. Results for amorphous Ge, Si, GaP, GaAs, GaSb, InP, InAs, and InSb are compared with experimental ε 2 ‐spectra.