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Optical properties of amorphous III–V compounds. I. Experiment
Author(s) -
Stuke J.,
Zimmerer G.
Publication year - 1972
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220490213
Subject(s) - amorphous solid , dielectric , spectral line , band gap , condensed matter physics , absorption (acoustics) , materials science , amorphous semiconductors , reflectivity , analytical chemistry (journal) , optics , chemistry , physics , crystallography , optoelectronics , quantum mechanics , chromatography
Abstract From reflectivity measurements ε 1 and ε 2 , the real and imaginary part of the dielectric constant, of the amorphous III‐V compounds InSb, InAs, InP, GaSb, GaAs, and GaP are determined in the fundamental absorption region up to 12 eV. Compared with the corresponding curves of the crystals, the spectra of the disordered materials are smeared out and shifted to lower energy. This shift leads to an increase of ε 1 (0). In the energy region of the E 2 ‐peaks a selective decrease of ε 2 is observed. The results for ε 2 are briefly discussed in terms of structural properties, and a modified Penn model is applied to the spectral dependence of ε 2 .